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BFW10

Part Number	BFW10
Manufacturer	COMSET
Description	N-CHANNEL SILICON FETS
Published	Aug 28, 2019
Detailed Description	BFW10 – BFW11 N CHANNEL SILICON FETS DESCRIPTION : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect ...
Datasheet	BFW10 PDF File

Overview

BFW10 – BFW11 N CHANNEL SILICON FETS DESCRIPTION : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case.
They are designed for broad band amplifiers (0 to 300 MHz).
Their very low frequencies makes these devices very suitable for differencial amplifiers, electro-medical and nuclear detector preamplifiers.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS -VGSO VDGO IDS IG Ptot Tstg Tj Drain-Source Voltage Gate-Source Voltage (Open Drain) Drain-Gate Voltage (Open Source) Drain Current Gate Current Total Power Dissipation at Tamb = 25°C Storage Temperature Range Junction Temperature THERMAL CHARACTER...

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