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U234

Siliconix
Part Number U234
Manufacturer Siliconix
Description monolithic dual n-channel JFET
Published Sep 21, 2019
Detailed Description monolithic dual n-channel JFETs designed for • • • • Differential Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain ...
Datasheet PDF File U234 PDF File

U234
U234


Overview
monolithic dual n-channel JFETs designed for • • • • Differential Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage ______ ••••••••• -50 V Gate Current ••••••••••••••••••••••••••••••• 50mA Total Device Dissipation at 25°C (Derate 1.
7 mW/oC to 200°C) ••••••••••••••• 300mW Storage Temperature Range •••••••••••••• -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) •.
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•••••.
•••• 300°C H Siliconix Performance Curves NQP See Section 4 BENEFITS • Good Matching Characteristics TO-71 See Section 6 ~~G, G2 s, S2 0,S2 G, ,0 o·o.
°1 '0 10 07 G2 s, Bottom View Gt.
, 0, ~, ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic I-.
!.
2 IGSS 13' S BVGSS 1'4 15' I -"- T A T I VGS(o!fl VGS 6 C IG 1- 7 lOSS Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current Saturation Dram Current (Note 1) 8 91, 19 1'iO I"iT 0 V N A 915 9o, 9o, 112 I~ 1- M I c C1SS Crss 14 en Common-Source Forward Transconductance (Note 11 Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance EqUivalent Short CircUit Input Noise Voltage Min -50 -05 -0.
3 0.
5 1000 1000 600 Max -100 -500 -4.
5 -4.
0 -50 -250 5.
0 5000 1600 35 10 6 2 80 Characteristic U231 U232 U233 U234 U235 Max Max Max Max Max Unit Test Conditions pA VGS=-30V.
VOS=O nA 150·C IG=-lI'A.
VOS=O V VOS=20V.
10=1 nA pA nA mA I'mho VaG = 20 V.
10 = 200 I'A VOS = 20 V.
VGS = 0 VOS = 20V.
VGS = 0 VOG = 20 V.
IO = 200l'A VOS = 20 V.
VGS = 0 VaG = 20 V.
IO = 200l'A 125·C 1= 1 kHz 1= 100MHz 1= 1 kHz pF VOS= 20 V.
VGS = 0 nV v'Hz I B I1= 1 MHz 1= 100 Hz Unit Test Conditions 15 IIGl-IG2 i 1- Differential Gate Current 16 (loss1-1OSS2) Saturation Drain Current 1- IOSSl Match (Note 1) 17 M iVGS1-VGS2 i 1- A T Differential Gate-Source Voltage 18 C I-H 19 I N ...



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