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2N5912

Siliconix
Part Number 2N5912
Manufacturer Siliconix
Description dual n-channel JFET
Published Sep 24, 2019
Detailed Description matched dual -- •n-channel JFETs designed for • • • 0- 1ft Wideband Differential Z Amplifiers ~ ABSOLUTE MAXIMUM ...
Datasheet PDF File 2N5912 PDF File

2N5912
2N5912

Overview
matched dual -- •n-channel JFETs designed for • • • 0- 1ft Wideband Differential Z Amplifiers ~ ABSOLUTE MAXIMUM RATINGS (25°C) Gate·to·Gate Voltage .
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±80V Gate·Drain or Gate·Source Voltage •.
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-25 V Gate Current .
50 rnA Device Dissipation (Each Side), (Derate 3 mW;oC) .
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367mW Total Device Dissipation,(Derate 4 mW;oC) .
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500mW Storage Temperature Range .
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-65 to +2000 c Lead Temperature (1/16" from case for 10 seconds) 3000 C H Siliconix Performance Curves NZf.
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D See Section 4 BENEFITS • High Gain through 100 MHz >gfs 5000 ~mho • Matching Characteristics Specified TO·78 See SectIon 6 ...


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