DatasheetsPDF.com

2N5551

CDIL
Part Number 2N5551
Manufacturer CDIL
Description NPN Transistor
Published Oct 12, 2019
Detailed Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON ...
Datasheet PDF File 2N5551 PDF File

2N5551
2N5551

Overview
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" EBC High Voltage NPN Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE Collector -Emitter Voltage VCEO 160 Collector -Base Voltage VCBO 180 Emitter -Base Voltage VEBO 6.
0 Collector Current Continuous IC 600 Power Dissipation @Ta=25 degC PD 625 Derate Above 25 deg C 5.
0 Power Dissipation @Tc=25 degC PD 1.
5 Derate Above 25 deg C 12 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 125 Junction to Ambient Rth(j-a) (1) 357 (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN Collector -Emitter Voltage VCEO IC=1mA,IB=0 160 Collector -Base Voltage VCBO IC=100uA.
IE=0 180 Emitter -Base Voltage VEBO IE=10uA, IC=-0 6.
0 Collector-Cut off Current ICBO VCB=160V, IE=0 - TYP - UNIT V V V mA mW mw/deg C W mw/deg C deg C deg C/W deg C/W MAX 50 UNIT V V V nA Emitter-Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Ta=100 deg C VCB=160V, IE=0 IEBO VEB=4V, IC=0 hFE* IC=1mA,VCE=5V IC=10mA,VCE=5V IC=50mA,VCE=5V VCE(Sat)* IC=10mA,IB=1mA IC=50mA,IB=5mA VBE(Sat) * IC=10mA,IB=1mA IC=50mA,IB=5mA 80 80 30 - - 50 uA - 50 nA -- 250 -- 0.
15 V - 0.
2 V - 1.
0 V - 1.
0 V 2N5551Rev_1290606D Continental Device India Limited Data Sheet Page 1 of 5 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN Dynamic Characteristics Small Signal Current Gain hfe IC=1mA, VCE=10V 50 f=1KHz 2...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)