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H128M

Huashan
Part Number H128M
Manufacturer Huashan
Description NPN SILICON TRANSISTOR
Published Oct 16, 2019
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H128M APPLICATIONS Suitable For Low Voltage Large ...
Datasheet PDF File H128M PDF File

H128M
H128M

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
NPN SILICON TRANSISTOR H128M APPLICATIONS Suitable For Low Voltage Large Current Drivers ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55~150 Tj Junction Temperature 150 PC Collector Dissipation 40 0mW VCBO Collector-Base Voltage 20V VCEO Collector-Emitter Voltage 15V VEBO Emitter- Base Voltage 6.
5 V IC Collector Current 1.
5A TO-92 1 Emitter E 2 Collector C 3 Base B ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO HFE VCE(sat) ICBO IEBO fT Cob Ron Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Curre...


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