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D452

Alpha & Omega Semiconductors
Part Number D452
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 22, 2019
Detailed Description AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trenc...
Datasheet PDF File D452 PDF File

D452
D452


Overview
AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.
5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.
5V) 100% UIS tested 100% Rg tested Top View D TO-252 D-PAK Bottom View D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Pulsed Forward Diode CurrentC Avalanche Current C Repetitive avalanche energy L=0.
1mH C ID IDM ISM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G Maximum 25 ±20 55 43 150 150 35 61 51.
5 25.
5 2.
5 1.
6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Maximum Junction-to-TAB B t ≤ 10s Steady-State Steady-State Steady-State Symbol RθJA RθJC RθJC-TAB Typ 14.
2 39 2.
4 2.
7 Max 20 50 2.
9 3.
2 S Units V V A mJ W W °C Units °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOD452 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 25 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C 1 5 µA IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.
2 1.
8 3 V ID(ON) On state drain current VGS=10V, VDS=5V 100 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A TJ=125°C 6.
5 9.
7 8.
5 12 mΩ VGS=4.
5V, ID=20A 11.
5 14 mΩ gFS Forward Transconductance VDS=5V, ID=10A 35 S VSD Diode Forward Voltage IS=1A,...


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