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DB4

EIC
Part Number DB4
Manufacturer EIC
Description SILICON BI-DIRECTIONAL DIACS
Published Oct 23, 2019
Detailed Description www.eicsemi.com DB3, DB4 VBR : 32 - 40 Volts FEATURES : * VBR : 32 V and 40 V * Low breakover current * Pb / RoHS Free M...
Datasheet PDF File DB4 PDF File

DB4
DB4


Overview
www.
eicsemi.
com DB3, DB4 VBR : 32 - 40 Volts FEATURES : * VBR : 32 V and 40 V * Low breakover current * Pb / RoHS Free MECHANICAL DATA : * Case: DO-35 Glass Case * Weight: approx.
0.
11g TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SILICON BI-DIRECTIONAL DIACS DO - 35 Glass (DO-204AH) 0.
079(2.
0 )max.
0.
020 (0.
52)max.
1.
00 (25.
4) min.
0.
150 (3.
8) max.
1.
00 (25.
4) min.
Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C) RATING Minimum Breakover Voltage Typical Breakover Voltage Maximum Breakover Voltage Maximum Breakover Current Maximum Breakover Voltage Symmetry Minimum Dynamic Breakback Voltage ∆I = [IBR to IF = 10 mA] Maximum Peak Current at Ta = 50 °C (10 μs duration, 120 cycle repetition rate) Maximum Peak output Voltage at Ta = 50 °C ** Thermal Impedance Junction to Ambient Operating Junction Temperature Range Storage Temperature Range SYMBOL VBR1 and VBR2 (Min.
) VBR1 and VBR2 (Typ.
) VBR1 and VBR2 (Max.
) I(BR)1 and I(BR)2 [V(BR)1] - [V(BR)2] | ΔV ± | IP eP RӨJA TJ TSTG DB3 28 32 36 200 3.
8 5.
0 DB4 35 40 45 ±2 ±3 60 - 40 to + 100 - 40 to + 150 **CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST UNIT V V V μA V V A V °C/W °C °C Page 1 of 1 Rev.
03: December 7, 2006 ...


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