DatasheetsPDF.com

HC08

HVGT
Part Number HC08
Manufacturer HVGT
Description Glass Passivated High Voltage Rectifier Assembly
Published Jan 18, 2020
Detailed Description HC08 1.0A 8.0kV --nS Glass Passivated High Voltage Rectifier Assembly ------------------------------------------------...
Datasheet PDF File HC08 PDF File

HC08
HC08


Overview
HC08 1.
0A 8.
0kV --nS Glass Passivated High Voltage Rectifier Assembly ------------------------------------------------------------------------------------------------------------------------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier assembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers.
FEATURES: 1.
High reliability design.
GPP chips.
2.
High voltage design.
3.
Power frequency ratio 4.
Conform to RoHS and SGS.
SIZE: (Unit:mm) HVGT NAME: HVP 5.
Epoxy resin molded in vacuumHave anticorrosion in the surface.
APPLICATIONS: 1.
Ignition device power supply.
2.
Microwave emission power.
3.
General purpose high voltage rectifier.
4.
Other.
MECHANICAL DATA: 1.
Case: epoxy resin molding.
2.
Terminal: external lead.
3.
Net weight: 35 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 8.
0 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C -- kV Average Forward Current Maximum IFAVM TA=55°C TOIL=55°C 1.
0 A -- A Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.
3mS 50 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items TSTG TA=25°C (Unless Otherwise Specified) Symbols Condition -40~+125 °C Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 7.
2 V Maximum Reverse Current IR1 at 25°C; at VRRM IR2 at 100°C; at VRRM 0.
5 uA 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.
5IR; IR=IFAVM; IRR=0.
25IR -- nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz -- pF GETE ELECTRONIC CO.
,LTD Http://www.
getedz.
com Http://www.
hvgtsemi.
com E-mai: sales@getedz.
com GETAI ELECTRONIC DEVICE CO.
,LTD TEL:0086-20-8184 9628 FAX:0086-20-...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)