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2SK1773

Renesas
Part Number 2SK1773
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Jan 19, 2020
Detailed Description 2SK1773 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File 2SK1773 PDF File

2SK1773
2SK1773

Overview
2SK1773 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter REJ03G0972-0200 (Previous: ADE-208-1319) Rev.
2.
00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SK1773 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3.
Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1000 ±30 — — 2.
0 — 3.
2 — — — — — — — — — Typ — — — — — 1.
5 5.
0 1700 700 315 25 110 210 135 0.
85 1050 Ratings 1000 ±30 5 15 5 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Max — — ±10 250 3.
0 2.
0 — — — — — — — — — — Unit V V µA µA V Ω (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 800 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V*3 S ID = 3 A, VDS = 20 V*3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 3 A, VGS = 10 V, ns RL = 10 Ω ns ns V IF = 5 A, VGS = 0 ns IF = 5 A, VGS = 0, diF/dt = 100 A/µs Rev.
2.
00 Sep 07, 2005 page 2 of 6 Channel Dissipation P...


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