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3419

CHENGXINWEI
Part Number 3419
Manufacturer CHENGXINWEI
Description P-Channel MOSFET
Published Feb 13, 2020
Detailed Description SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD. 3419 P-Channel Enhancement Mode MOSFET www.cxwic.com 18 3419 P-Channe...
Datasheet PDF File 3419 PDF File

3419
3419

Overview
SHENZHEN CHENGXINWEI TECHNOLOGY CO.
, LTD.
3419 P-Channel Enhancement Mode MOSFET www.
cxwic.
com 18 3419 P-Channel Enhancement Mode MOSFET DATA SHEET 3419 P-Channel Enhancement Mode MOSFET www.
cxwic.
com 28 SHENZHEN CHENGXINWEI TECHNOLOGY CO.
, LTD.
  The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.
  This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.
  P-Channel Enhancement Mode MOSFET     GENERAL FEATURES   RDS(ON) <  Ω @     RDS(ON) <  Ω @     High Power and current handing capability   Lead free product is acquired   Surface Mount Package    Application   PWM applications   Load switch   Power management  DFN3 X3     ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)  Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ    TSTG     IS     IDM ID    Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Pulse Drain Current Tested① Continuous Drain Current(VGS=-10V) ①    TC =25°C TC =25°C TC =25°C Rating ±20 -30 175 -50 to 150 -30 -100 -20 Unit V V °C °C A A A www.
cxwic.
com 38 SHENZHEN CHENGXINWEI TECHNOLOGY CO.
, LTD.
P-Channel Enhancement Mode MOSFET     ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)  Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) NOTES: Symbol Condition Min Typ Max Unit BVDSS IDS...


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