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3075

CXW
Part Number 3075
Manufacturer CXW
Description N-Channel MOSFET
Published Feb 13, 2020
Detailed Description   N-channel Enhancement Mode MOSFET       3075 DESCRIPTION    The   uses  advanced  trench  technology  to  provide  e...
Datasheet PDF File 3075 PDF File

3075
3075

Overview
  N-channel Enhancement Mode MOSFET       3075 DESCRIPTION    The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.
  This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.
        GENERAL FEATURES   RDS(ON) <  Ω @ VGS=4.
5V    RDS(ON) <  Ω @ VGS=10V   High Power and current handing capability   Lead free product is acquired   Surface Mount Package  D D DD Application   PWM applications   Load switch   Power management  SSSG   PIN1   DATASHEET 3424 PIN1 ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage Gate-source Voltage Drain Current TC=25℃ TC=100℃   Pulsed Drain Current A   Total Power Dissipation   TC=25℃  TC=100℃ Single Pulse Avalanche Energy B Thermal Resistance Junction-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ ,TSTG Limit 30 ±20 30 21 120 35 15 29 -55～+150                                                        1 /6 Unit V V A A W W mJ ℃/ W ℃   N-channel Enhancement Mode MOSFET         ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)  3075 DATASHEET 3424 Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) 0V,V VGS= 0V, ID=250μA VDS= 24V,VGS=0V TJ=25℃ TJ=55℃ VGS= ±20V, VDS=0V VDS= VGS, ID=250μA 30 V 1 10 ±100 μA nA 1.
2 1.
5 2.
2 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=15A VGS= 4.
5V, ID=15A 4.
1 5.
0 mΩ 6.
5 8.
0 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD IS IS=1 A,VGS=0V 0.
7 1.
2 30 V A Dynamic Parameters Input Capacitance Output Capacitance Ciss Coss VDS=15V,VGS=0V,f=1MHZ 550 pF Reverse Transfer Capacitance Switching Parameters Crss 60 Total Gate Charge Gate-Source Charge Gate-Drain Charge Reverse Recovery Chrage Reverse Recovery Time Qg Qgs VGS=1...


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