N-channel
Enhancement
Mode
MOSFET
DESCRIPTION
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < Ω @ VGS=4. 5V
RDS(ON) < Ω @ VGS=10V High Power and current handing capability Lead free product is acquired Surface Mount Package
Application
PWM applications Load switch Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage Drain Current @ Continuous(Note 2)
VGS ID（25℃） ID（100℃）
Drain Current @ Current‐Pulsed (Note 1) Maximum Power Dissipation (TA=25℃)
IDM PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient (Note 2)
RθJA
4520 DATASHEET 3424
Limit 45 +20
‐55 To 150
35
Unit V V A A A W ℃
℃/W
1
N-channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
4520
DATASHEET
3424
Parameter
Symbol Condition
Min Typ Max
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS VGS=0V ID=250μA
45
Zero Gate Voltage Drain Current
IDSS VDS=24V,VGS=0V
1
Gate‐Body Leakage Current
IGSS VGS=±20V,VDS=0V
±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250μA
Drain‐Source On‐State Resistance
RDS(ON) VGS=4. 5V, ID=15A
VGS=10V, ID=15A
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Ciss VDS=15V,VGS=0V, F=1. 0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn‐on Delay Time
td(on)
VDS=15V, VGS=10V,RGEN Ω
Turn‐on Rise Time
tr
Turn‐Off Delay Time
td(off)
...
4520 PDF File
