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D44H11J3

CYStech
Part Number D44H11J3
Manufacturer CYStech
Description Low Vcesat NPN Epitaxial Planar Transistor
Published Feb 18, 2020
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 Features • Low VCE(sat) • High BVCEO • Ex...
Datasheet PDF File D44H11J3 PDF File

D44H11J3
D44H11J3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package BVCEO IC RCESAT Spec.
No.
: C606J3-A Issued Date : 2005.
08.
15 Revised Date :2010.
12.
08 Page No.
: 1/7 80V 8A 60mΩ Symbol D44H11J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1.
Single Pulse , Pw≦380μs,Duty≦2%.
2.
When mounted on a PCB with the minimum pad size.
D44H11J3 Limits 80 80 6 8 16 (Note 1) 1.
75 (Note 2) 20 71.
4 (Note 2) 6.
25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C606J3-A Issued Date : 2005.
08.
15 Revised Date :2010.
12.
08 Page No.
: 2/7 Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min.
80 60 40 - Typ.
0.
3 1.
0 50 130 Max.
10 50 0.
6 1.
5 - Unit V μA μA V V MHz pF Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=8A, IB=0.
4A IC=8A, IB=0.
8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device D44H11J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel D44H11J3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C606J3-A Issued Date : 2005.
08.
15 Revised Date :2010.
12.
08 Page No.
: 3/7 Typical Characteristics Collector Current---IC(mA) Grounded Emitter Output Characteristics 2500 2000 1500 10mA 8mA 6mA 1000 4mA 500 0 0 2mA IB=0mA 24 Collector To Emitter Voltage---...


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