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OPB847

TT
Part Number OPB847
Manufacturer TT
Description Slotted Optical Switch
Published Apr 27, 2020
Detailed Description Slotted Optical Switch OPB847, OPB848 Features:  Non-contact switching  Apertured for high resolution  Hermetically s...
Datasheet PDF File OPB847 PDF File

OPB847
OPB847

Overview
Slotted Optical Switch OPB847, OPB848 Features:  Non-contact switching  Apertured for high resolution  Hermetically sealed components Description: The OPB847 and OPB848 consists of a gallium aluminum arsenide LED and a silicon phototransistor, which is soldered into a printed PCBoard and mounted in a high-temperature plastic housing on opposite sides of a 0.
100 inch (2.
540 mm) wide slot.
Both device types have a .
025 (0.
635mm) inch by .
060 inch (1.
524 mm) aperture in front of the phototransistor for high resolution positioning sensing.
Phototransistor switching takes place when an opaque object passes through the slot.
Applications:  Non-contact interruptive object sensing  Assembly line automation  Machine automation  Equipment security  Machine safety LED Peak Slot Width / Aperture Lead Length / Part Number Wavelength Sensor Depth Emitter/Sensor Spacing OPB847 OPB848 890 nm Transistor 0.
100" / 0.
250” 0.
025" / 0.
025" 0.
425" / 0.
300" 14 23 Pin # 1 2 3 4 Description Anode Cathode Emitter Collector RoHS General Note TT Electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
© TT electronics plc [ MILLIMETERS] DIMENSIONS ARE IN: INCHES TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste.
130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.
ttelectronics.
com | sensors@ttelectronics.
com Issue A 11/2016 Page 1 Slotted Optical Switch OPB847, OPB848 Electrical Specifications Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Operating and Storage Temperature Range Lead Soldering Temperature [1/16 inch (1.
6mm) from the case for 5 sec.
with soldering iron] Input Diode Forward DC Current Reverse Voltage Power Dissipation(2) Output Phototransistor Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(2) -40° C to +85° C 240° C 50 mA 2.
0 V 100 mW 30 V 7V 100 mW El...


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