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TIP112

Part Number	TIP112
Manufacturer	NTE
Description	Silicon NPN Transistor
Published	Jul 5, 2020
Detailed Description	TIP112 Silicon NPN Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP112 is a silicon NPN ...
Datasheet	TIP112 PDF File

Overview

TIP112 Silicon NPN Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP112 is a silicon NPN Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications.
Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.
5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO .
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100V Collector−Base Voltage, VCB .
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100V Emitter−Base Voltage, VEB .
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5V Collector Current, IC Continuous .
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2A Peak .
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4A Base Current, IB .
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50mA Total Power Dissipation (TC = +25C), PD .
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50W Derate Above +25C .
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0.
4W/C Total Power Dissipation (TA = +25C), PD .
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2.
0W Derate Above +25C .
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0.
016W/C Unclamped Inductive Load Energy, E .
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