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RF3356

MCC
Part Number RF3356
Manufacturer MCC
Description NPN RF Transistor
Published Jul 29, 2020
Detailed Description RF3356 Features • High Power Gain • Low Noise Figure • High Cut-off Frequency • RF Wideband Amplifiers and Oscillators....
Datasheet PDF File RF3356 PDF File

RF3356
RF3356


Overview
RF3356 Features • High Power Gain • Low Noise Figure • High Cut-off Frequency • RF Wideband Amplifiers and Oscillators.
• Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant.
See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 833℃/W Junction to Ambient Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC PD Rating 20 12 3 100 150 Unit V V V mA mW Internal Structure C B E Marking: R25 NPN RF Transistor SOT-23 A D CB F E G H J L K DIMENSIONS DIM INCHES MIN MAX MM MIN MAX A 0.
110 0.
120 2.
80 3.
04 B 0.
083 0.
104 2.
10 2.
64 C 0.
047 0.
055 1.
20 1.
40 D 0.
034 0.
041 0.
85 1.
05 E 0.
067 0.
083 1.
70 2.
10 F 0.
018 0.
024 0.
45 0.
60 G 0.
0004 0.
006 0.
01 0.
15 H 0.
035 0.
043 0.
90 1.
10 J 0.
003 0.
007 0.
08 0.
18 K 0.
014 0.
020 0.
35 0.
51 L 0.
007 0.
020 0.
20 0.
50 NOTE Suggested Solder Pad Layout 0.
031 0.
800 0.
035 0.
900 0.
079 2.
000 inches mm 0.
037 0.
950 0.
037 0.
950 Rev.
3-1-08292019 1/4 MCCSEMI.
COM RF3356 Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current IEBO DC Current Gain* hFE Transition Frequency fT Power Gain Gp Noise Figure NF *Pulse Width ≤ 380μs, Duty Cycle≤2.
0% Min 130 Typ 7 12.
5 1.
1 Max 1 1 300 2.
0 Units Conditions µA µA GHz dB dB VCB=20V, IE=0 VEB=3V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCE=10V, IC=20mA, f=1GHz VCE=10V, IC=10mA, f=1GHz Rev.
3-1-08292019 2/4 MCCSEMI.
COM Curve Characteristics Power Dissipation (mW) Fig.
1 - Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature (°C) 6 5 4 3 2 1 0 0.
5 ...



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