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2SK1162

INCHANGE
Part Number 2SK1162
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1162 ·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Lo...
Datasheet PDF File 2SK1162 PDF File

2SK1162
2SK1162

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1162 ·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Low drive current ·No secondary breakdown ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 30 PD Total Dissipation 100 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
83 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS=±30V; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=5A IGSS Gate-Source Leakage Current VGS= ±25V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 400V; VGS= 0V;Tc=25℃ VSDF Diode forward voltage ISD=10A, VGS = 0 V 500 V 2.
0 3.
0 V 700 900 mΩ ±10 μA 250 μA 1.
0 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Pl...


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