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2N6129

Part Number	2N6129
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6129 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= 2.5A ...
Datasheet	2N6129 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6129 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= 2.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) ·Complement to Type 2N6132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 2 A 50 W 150 ℃ ...

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