DatasheetsPDF.com

2N6130

Part Number	2N6130
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6130 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= 2.5A ...
Datasheet	2N6130 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6130 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= 2.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type 2N6133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 2 A 50 W 150 ℃ ...

Similar Datasheet

2N6100 NPN Transistor - INCHANGE
2N6100 Power Transistors - RCA
2N6100 Silicon Power Transistor - SavantIC
2N6101 Power Transistors - RCA
2N6101 Silicon Power Transistor - SavantIC
2N6101 NPN Transistor - INCHANGE
2N6102 Power Transistors - RCA
2N6102 Silicon Power Transistor - SavantIC
2N6102 NPN Transistor - INCHANGE
2N6103 Power Transistors - RCA

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)