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2N3906

Part Number	2N3906
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) ·NPN complement to Typ...
Datasheet	2N3906 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .
40V ) ·Low current ( max .
200mA ) ·NPN complement to Type 2N3904.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching ·Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IBM Peak base current Ptot Total Power Dissipation TJ Junction Temperature Tstg Storage Temperature VALUE UNIT -40 V -40 V -5 V -200 mA -300 mA -100 mA -500 mW -65~150 ℃ -65~150 ℃ 2N3906 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient MAX 250 UNIT K/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N3906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified S...

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