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2N6111

INCHANGE
Part Number 2N6111
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 4, 2020
Detailed Description isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6111 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -3A ·...
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2N6111
2N6111

Overview
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6111 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.
125 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6111 ELECTRICAL CH...


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