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2SA965

Part Number	2SA965
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Power amplifier applications ·Driver stage amplifier applications ·Minimum...
Datasheet	2SA965 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Power amplifier applications ·Driver stage amplifier applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SA965 APPLICATIONS ·Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ Ta<50℃ J Junction Temperature Tstg Storage Temperature Range VALUE -120 -120 -5 -0.
8 -0.
9 150 -55~150 UNIT V V V A W ℃ ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-base breakdown Voltage IC= -10mA; IE= 0 VEBO Emitter-base breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA ...

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