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2SC3150

INCHANGE
Part Number 2SC3150
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 900V(Min) ·Fast Switching Speed ·Wide...
Datasheet PDF File 2SC3150 PDF File

2SC3150
2SC3150

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 900V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3150 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3150 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.
5A; IB= 0.
3A 2.
0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.
5A; IB= 0.
3A 1.
5 V ICBO Collector Cutoff Current VCB= 800V; IE=0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.
2A ; VCE= 5V 10 40 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1.
0MHz 60 pF fT Current-Gain—Bandwidth Product IC= 0.
2A ; VCE= 10V 15 MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A , IB1= 0.
4A; IB2= -0.
8A RL= 200Ω; VCC=400V 1.
0 μs 3.
0 μs 0.
7 μs  hFE-1 Classifications K L M 10-20 15-30 20-40 isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3150 NOTICE： ISC reserves the rights to make changes of the content he...


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