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2SD1409A

Part Number	2SD1409A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1409A DESCRIPTION ·Hig...
Datasheet	2SD1409A PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1409A DESCRIPTION ·High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) ·High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1409A ELECTRICAL C...

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