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AD161

Part Number	AD161
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Power Transistor AD161 DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=50-350@IC= 0.5...
Datasheet	AD161 PDF File

Overview

isc Silicon NPN Power Transistor AD161 DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=50-350@IC= 0.
5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
7V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 4 W 90 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
52 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBO...

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