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BD828

INCHANGE
Part Number BD828
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 7, 2020
Detailed Description isc Silicon PNP Power Transistor INCHANGE Semiconductor BD828 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR...
Datasheet PDF File BD828 PDF File

BD828
BD828

Overview
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD828 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD827 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
0 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
5 A 2 W 10 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.
5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website：www.
iscsemi.
com 1...


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