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BD830

Part Number	BD830
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor BD830 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR...
Datasheet	BD830 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD830 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD829 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
0 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation...

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