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BD842

INCHANGE
Part Number BD842
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 7, 2020
Detailed Description isc Silicon PNP Power Transistor INCHANGE Semiconductor BD842 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR...
Datasheet PDF File BD842 PDF File

BD842
BD842

Overview
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD842 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD841 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.
0 A 2 W 10 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.
5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD842 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 1A; IB= -100mA VBE(on) Base-Emitter On Voltage IC= -1.
0A ; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 VCB=-30V; IE= 0; TC= 125℃ IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -5mA ; VCE= -2V hFE-2 DC Current Gain IC= -150mA ; VCE= -2V hFE-3 DC Current Gain IC= -1A ; VCE=- 2V fT Current-Gain—Bandwidth Product IC= -50mA ; VCE=- 5V MIN TYP.
MAX UNIT -60 V -0.
8 V -1.
3 V -0.
1 uA -10 -10 uA 25 40 250 25 50 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our...


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