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BDW84C

INCHANGE
Part Number BDW84C
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 7, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor isc Product Specification BDW84C DESCRIPTION ·Collector Current -IC= -15A ...
Datasheet PDF File BDW84C PDF File

BDW84C
BDW84C

Overview
isc Silicon PNP Darlington Power Transistor isc Product Specification BDW84C DESCRIPTION ·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
5 A 3.
5 W 150 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.
7 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BDW84C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -12mA -2.
5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -150mA -4.
0 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -3V -2.
5 V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -60V; IB= 0 VCB= -100V;IE= 0 VCB= -100V;IE= 0;TC= 150℃ VEB= -5V; IC=0 -1.
0 mA -0.
5 -5.
0 mA -2.
0 mA hFE-1 DC Current Gain IC= -6A ; VCE= -3V 750 20000 hFE-2 DC Current Gain IC= -15A ; VCE= -3V 100 VF Diode Forward Voltage IF= 10A 4 V Switching times ton Turn-on Time toff Turn-off Time 0.
9 μs IC= -10A; IB1= -IB2= -40mA; RL= 3Ω; VBE(OF...


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