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BU930

INCHANGE
Part Number BU930
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ...
Datasheet PDF File BU930 PDF File

BU930
BU930

Overview
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.
) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W BU930 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 150mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 150mA VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 2V ICBO Collector Cutoff Current VCB= RatedVCBO; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 6V hFE-2 DC Current Gain IC= 6A; VCE= 6V hFE-3 DC Current Gain IC= 10A; VCE= 6V VECF C-E Diode Forward Voltage IF= 10A COB Output Capacitance IE= 0; VCB= 10V; f= 100kHz Switching Times ts Storage Time tf Fall Time VCC= 12V; IC= 8A, IB1= -IB2= 80mA BU930 MIN TYP MAX UNIT 350 V 1.
8 V 2.
0 V 2.
2 V 2.
5 V 2.
4 V 0.
5 mA 50 mA 300 150 50 2.
5 V 165 pF 8.
5 μs 2.
6 μ...


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