DatasheetsPDF.com

BUP51

Part Number	BUP51
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation vo...
Datasheet	BUP51 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 175 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 80 A ICM Peak Collector Current 100 A PC Collector Power Dissipation 300 W TJ Junction Temperature -55~200 ℃ Tstg Storage T...

Similar Datasheet

BUP06CN015E-01 60V Radiation Tolerant power MOSFET - Infineon
BUP200 IGBT - Siemens Semiconductor Group
BUP200D IGBT - Siemens Semiconductor Group
BUP202 IGBT - Siemens Semiconductor Group
BUP203 IGBT - Siemens Semiconductor Group
BUP212 IGBT - Infineon Technologies AG
BUP213 IGBT - Siemens Semiconductor Group
BUP22 NPN Transistor - INCHANGE
BUP22A Silicon NPN Power Transistor - Inchange Semiconductor
BUP22B Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)