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D40C7

Part Number	D40C7
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor D40C7 DESCRIPTION ·High DC Current Gain- : hFE = 10K-70K ·Collector-Emitte...
Datasheet	D40C7 PDF File

Overview

isc Silicon NPN Darlington Power Transistor D40C7 DESCRIPTION ·High DC Current Gain- : hFE = 10K-70K ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 13 V IC Collector Current-Continuous 0.
5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 6.
25 W 150 ℃ Tstg Storage Temper...

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