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DD502B

INCHANGE
Part Number DD502B
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation vo...
Datasheet PDF File DD502B PDF File

DD502B
DD502B

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A ICM Peak Collector Current 15 A PC Collector Power Dissipation 50 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temper...


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