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HLB124E

Part Number	HLB124E
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor HLB124E DESCRIPTION ·High Speed Switching ·Low Collector Saturation Voltage ·High Rel...
Datasheet	HLB124E PDF File

Overview

isc Silicon NPN Power Transistor HLB124E DESCRIPTION ·High Speed Switching ·Low Collector Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching inductive circuits, and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse 4 A IB Base Current 1 A IBP Base Current-Pulse PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 2 A ...

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