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KSC5026M

Part Number	KSC5026M
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Small reverse t...
Datasheet	KSC5026M PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high definition CRT display ,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1.
5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ...

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