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MJD42C1G

Part Number	MJD42C1G
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VC...
Datasheet	MJD42C1G PDF File

Overview

...E(sat)= -1.
5 V(Max)@ IC = -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current -2 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.
75 Tj Junction Tmperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Re...

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