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TIP31A

Part Number	TIP31A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A ·Co...
Datasheet	TIP31A PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
2V(Max.
)@IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) ·Complement to Type TIP32A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO IC ICM IB PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Tte...

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