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TIP34B

INCHANGE
Part Number TIP34B
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 9, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@IC = -1A ·Collector-Emitter Sustaining Vo...
Datasheet PDF File TIP34B PDF File

TIP34B
TIP34B


Overview
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@IC = -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type TIP33B ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A ICM Collector Current-peak -15 A IB Base Current -3 A PC Collector Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
56 ℃/W TIP34B isc website:www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transisto...



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