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TIP35

Part Number	TIP35
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN Power Transistor TIP35 DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Susta...
Datasheet	TIP35 PDF File

Overview

isc Silicon NPN Power Transistor TIP35 DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Complement to Type TIP36 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current 5 A PC Collector Power Dissipation@ TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
0 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELEC...

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