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TIP41F

Part Number	TIP41F
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN Power Transistors TIP41F DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sust...
Datasheet	TIP41F PDF File

Overview

isc Silicon NPN Power Transistors TIP41F DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.
3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 160V(Min) ·Complement to Type TIP42F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 3 A 65 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website： www.
iscsemi.
com 1 ...

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