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TIP101

INCHANGE
Part Number TIP101
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TIP101 DESCRIPTION ·High DC Current Gain- : hFE = 1...
Datasheet PDF File TIP101 PDF File

TIP101
TIP101

Overview
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TIP101 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.
0V(Max)@ IC= 3A = 2.
5V(Max)@ IC= 8A ·Complement to Type TIP106 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 1 A 80 W 2 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TIP101 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A, IB= 80mA VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V, IE= 0 ICEO Collector Cutoff Current VCE= 40V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 4V hFE-2 DC Current Gain IC= 8A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V,f= 0.
1MHz MIN MAX UNIT 80 V 2.
0 V 2.
5 V 2.
8 V 50 μA 50 μA 8 mA 1000 20000 200 300 pF NOTICE： ISC reserves the ri...


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