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TIP132

Part Number	TIP132
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Low Collector...
Datasheet	TIP132 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.
0V(Max)@ IC= 4A ·Complement to Type TIP137 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current- Continuous Collector Power Dissipation PC ...

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