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TIP147F

INCHANGE
Part Number TIP147F
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 9, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor TIP147F DESCRIPTION ·High DC Current Gain ·Monolithic construction with bu...
Datasheet PDF File TIP147F PDF File

TIP147F
TIP147F

Overview
isc Silicon PNP Darlington Power Transistor TIP147F DESCRIPTION ·High DC Current Gain ·Monolithic construction with built in Base-Emitter shunt resistors ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP142F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.
5 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
56 ℃/W isc website：www.
iscsemi.
com 1 isc & i...


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