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2SA715

Part Number	2SA715
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 16, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SA715 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- V(BR)...
Datasheet	2SA715 PDF File

Overview

isc Silicon PNP Power Transistor 2SA715 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -35V (Min) ·Complement to Type 2SC1162 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current-Continuous -2.
5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.
0 A 0.
75 W 10 ...

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