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2SA1010

INCHANGE
Part Number 2SA1010
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 16, 2020
Detailed Description isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Compleme...
Datasheet PDF File 2SA1010 PDF File

2SA1010
2SA1010

Overview
isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.
0 V IC Collector Current-Continuous -7.
0 A ICM Collector Current-Peak -15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.
5 A 1.
5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHA...


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