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2SA1116

INCHANGE
Part Number 2SA1116
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 16, 2020
Detailed Description isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·Hi...
Datasheet PDF File 2SA1116 PDF File

2SA1116
2SA1116

Overview
isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.
) ·High Power Dissipation ·Complement to Type 2SC2607 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC...


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