DatasheetsPDF.com

2SB763

Part Number	2SB763
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB763 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good ...
Datasheet	2SB763 PDF File

Overview

isc Silicon PNP Power Transistor 2SB763 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Complement to Type 2SD858 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 60 W 150 ℃ Tstg Storage T...

Similar Datasheet

2SB703 SILICON POWER TRANSISTOR - SavantIC
2SB703 PNP Transistor - INCHANGE
2SB705 PNP Transistor - INCHANGE
2SB705 Silicon PNP Power Transistors - SavantIC
2SB705A Silicon PNP Power Transistors - SavantIC
2SB705A Power Transistor - Inchange Semiconductor
2SB705B Silicon PNP Power Transistors - SavantIC
2SB705B PNP Transistor - INCHANGE
2SB706 PNP/NPN SILICON TRANSISTOR - ETC
2SB706A PNP/NPN SILICON TRANSISTOR - ETC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)