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2SB1015

Part Number	2SB1015
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7 V(Max)@IC= -3...
Datasheet	2SB1015 PDF File

Overview

isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.
7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
5 A 2 W 25...

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