DatasheetsPDF.com

2SB1024

Part Number	2SB1024
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC=...
Datasheet	2SB1024 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max.
)@ IC= -3A ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD1414 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power D...

Similar Datasheet

2SB1000 LOW FREQUENCY POWER AMPLIFIER - Hitachi Semiconductor
2SB1000A LOW FREQUENCY POWER AMPLIFIER - Hitachi Semiconductor
2SB1001 Silicon PNP Epitaxial Transistor - Hitachi Semiconductor
2SB1001 Silicon PNP Transistor - Kexin
2SB1001 Silicon PNP Transistor - Renesas
2SB1002 Silicon PNP Transistor - Hitachi Semiconductor
2SB1002 Silicon PNP Transistor - Renesas
2SB1005 PNP Transistor - INCHANGE
2SB1005 SILICON POWER TRANSISTOR - SavantIC
2SB1007 PNP Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)