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2SB1071

INCHANGE
Part Number 2SB1071
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Power Transistor 2SB1071 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -2A...
Datasheet PDF File 2SB1071 PDF File

2SB1071
2SB1071

Overview
isc Silicon PNP Power Transistor 2SB1071 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.
5V(Max)@IC= -2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter...


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